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Optoelectric Switch and PV-effect from Dual Schottky Diodes in Ambipolar MoSe2 Field-Effect Transistors

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Tech ID:
15-146
Principal Investigator:
Luis Balicas
Licensing Manager:
Patents:
Description:

The present technology describes a light-induced diode-like response in multi-layered MoSe2 field-effect transistors. The sense of current rectification can be controlled by the back-gate voltage which is able to modulate the relative amplitude between both Schottky barriers at the electrical contacts. This effect corresponds to a new form of optoelectronic switch or gate that also yields a photovoltaic response. In addition, one can harvest photovoltaic currents from such devices based on transition metal dichalcogenides without requiring PN-junctions. In fact, research suggests that the photovoltaic efficiency can be increased by just increasing the relative asymmetry between both Schottky barriers in these field-effect transistors.  This new electro-optical effect, namely light induced diode behavior whose sense of current rectification is controllable by a gate voltage, produces a new type of optoelectronic switch having a potential for technological applications.